svf10n60t/f/fg/s/k_datasheet 10a, 600v n-channel mosfet general description svf10n60t/f/fg/s/k is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary f-cell tm structure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc- dc converters and h-bridge pwm motor drivers. features ? 10a,600v,r ds(on)(typ.) =0.75 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability nomenclature ordering information part no. package marking material packing svf10n60t to-220-3l svf10n60t pb free tube svf10n60f to-220f-3l svf10n60f pb free tube svf10n60fg to-220f-3l svf10n60fg halogen free tube SVF10N60S to-263-2l SVF10N60S pb free tube SVF10N60Str to-263-2l SVF10N60S pb free tape &reel svf10n60k to-262-3l svf10n60k pb free tube hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 1 of 9
svf10n60t/f/fg/s/k_datasheet hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 2 of 9 absolute maximum ratings (t c =25 c unless otherwise noted) ratings characteristics symbol svf10n 60t svf10n 60f(g) svf10n 60s svf10n 60k unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v t c =25c 10 drain current t c =100c i d 7 a drain current pulsed i dm 40 a 156 50 150 148 w power dissipation(t c =25 c) -derate above 25 c p d 1.25 0.4 1.20 1.18 w/ c single pulsed avalanche energy (note 1) e as 654 mj operation junction temperature range t j -55 +150 c storage temperature range t stg -55 +150 c thermal characteristics ratings characteristics symbol svf10n 60t svf10n 60f(g) svf10n 60s svf10n 60k unit thermal resistance, junction-to-case r jc 0.8 2.5 0.83 0.84 c/w thermal resistance, junction-to-ambient r ja 62.5 120 62.5 62.5 c/w electrical characteristics (t c =25 c unless otherwise noted) characteristics symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =5.0a -- 0.75 1.0 input capacitance c iss -- 1132 -- output capacitance c oss -- 135 -- reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 3.91 -- pf turn-on delay time t d(on) -- 32.33 -- turn-on rise time t r -- 60.40 -- turn-off delay time t d(off) -- 58.67 -- turn-off fall time t f v dd =300v,i d =10a, r g =25 (note 2,3) -- 38.67 -- ns total gate charge q g -- 19.38 -- gate-source charge q gs -- 6.26 -- gate-drain charge q gd v ds =480v,i d =10a, v gs =10v (note 2,3) -- 6.55 -- nc
svf10n60t/f/fg/s/k_datasheet source-drain diode ratings and characteristics characteristics symbol test conditions min. typ. max. unit continuous source current i s -- -- 10 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 40 a diode forward voltage v sd i s =10a,v gs =0v -- -- 1.3 v reverse recovery time t rr -- 535.39 -- ns reverse recovery charge q rr i s =10a,v gs =0v, di f /dt=100a/s (note 2) -- 4.6 -- c notes: 1. l=30mh, i as =6.0a, v dd =150v, r g =25 , starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature. typical characteristics hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 3 of 9
svf10n60t/f/fg/s/k_datasheet typical characteristics (continued) hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 4 of 9
svf10n60t/f/fg/s/k_datasheet typical characteristics (continued) hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 5 of 9
svf10n60t/f/fg/s/k_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 6 of 9 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
svf10n60t/f/fg/s/k_datasheet package outline to-220-3l unit: mm to-220f-3l unit: mm 3.300.25 4.720.30 10.030.30 hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 7 of 9 2.800.30 2.550.25 15.750.50 9.800.50 2.54 type 1.47max 0.800.15 0.500.15 15.800.50 6.700.30 3.200.20
svf10n60t/f/fg/s/k_datasheet package outline(continued) to-263-2l unit: mm to-262-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 8 of 9
svf10n60t/f/fg/s/k_datasheet hangzhou silan microelectronics co.,ltd rev:1.5 2012.06.04 http://www.silan.com.cn page 9 of 9 disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manuf acturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! attachment revision history date rev description page 2011.01.24 1.0 original 2011.05.17 1.1 add the package of to-263-2l 2011.09.02 1.2 modify ?package outline? 2012.01.18 1.3 add the package of to-262-3l 2012.04.11 1.4 add the halogen free information of svf10n60f 2012.06.04 1.5 modify the values of t rr and q rr
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